skiip 26nabi066v3 ? by semikron rev. 0 ? 06.07.2012 1 miniskiip ? cib ipm nabi 3-phase bridge rectifier + brake chopper + 3-phase bridge inverter intelligent power module skiip 26nabi066v3 features ? contact springs fo r solder-free and quick assembly ? trench-field-stop igbt ? freewheeling diodes in cal technology ? hvic gate driver in soi technology with advanced level shifter ? matched propagation delay ? over-current and under-voltage detection ? interlock logic for cross conduction protection ? multi-purpose error input ? integrated temperature sensor (ntc) ? rohs compliant ? ul recognised file no. e63532 typical applications* ? industrial & consumer drives ? power supplies (smps & ups) remarks ? product reliability results valid for t j 150c ? case temp. limited to t c = 125c max. (for baseplateless modules t c = t s footnotes 1) please refer to technical explanations absolute maximum ratings symbol conditions values unit inverter - igbt v ces t j =25c 600 v i c t j = 150 c t s =25c 53 a t s =70c 39 a i c t j = 175 c t s =25c 59 a t s =70c 47 a i cnom 50 a i crm i crm = 2 x i cnom 100 a t psc v cc = 360 v v ge 15 v v ces 600 v t j =150c 6s t j -40 ... 175 c chopper - igbt v ces t j =25c 600 v i c t j = 150 c t s =25c 53 a t s =70c 39 a i c t j = 175 c t s =25c 59 a t s =70c 47 a i cnom 50 a i crm i crm = 2 x i cnom 100 a t psc v cc = 360 v v ge 15 v v ces 600 v t j =150c 6s t j -40 ... 175 c inverse - diode v rrm t j =25c 600 v i f t j = 150 c t s =25c 45 a t s =70c 33 a i f t j = 175 c t s =25c 51 a t s =70c 40 a i fnom 50 a i frm i frm = 2 x i fnom 100 a i fsm t p = 10 ms, sin 180, t j =150c 320 a t j -40 ... 175 c freewheeling - diode v rrm t j =25c 600 v i f t j = 150 c t s =25c 45 a t s =70c 33 a i f t j = 175 c t s =25c 51 a t s =70c 40 a i fnom 50 a i frm i frm = 2 x i fnom 100 a i fsm t p = 10 ms, sin 180, t j =150c 320 a t j -40 ... 175 c
skiip 26nabi066v3 2 rev. 0 ? 06.07.2012 ? by semikron miniskiip ? cib ipm nabi 3-phase bridge rectifier + brake chopper + 3-phase bridge inverter intelligent power module skiip 26nabi066v3 features ? contact springs fo r solder-free and quick assembly ? trench-field-stop igbt ? freewheeling diodes in cal technology ? hvic gate driver in soi technology with advanced level shifter ? matched propagation delay ? over-current and under-voltage detection ? interlock logic for cross conduction protection ? multi-purpose error input ? integrated temperature sensor (ntc) ? rohs compliant ? ul recognised file no. e63532 typical applications* ? industrial & consumer drives ? power supplies (smps & ups) remarks ? product reliability results valid for t j 150c ? case temp. limited to t c = 125c max. (for baseplateless modules t c = t s footnotes 1) please refer to technical explanations absolute maximum ratings symbol conditions values unit rectifier - diode v rrm t j =25c, chiplevel 1600 v i f t s =25c, t j =150c 43 a i fsm 10 ms sin 180 t j =25c 370 a t j =150c 270 a i 2 t 10 ms sin 180 t j =25c 685 a 2 s t j =150c 365 a 2 s t j -40 ... 150 c driver vcc vcc-vss, vccl-vssl 17 v vbx vb1-u, vb2-v, vb3-w 17 v vsx voltage to vss -25 ... 600 v v in hinx-vss, linx-vss, /errin-vss vss-0.3 ... vcc+0.3 v v oerr /errout-vss vss-0.3 ... vcc+0.3 v i max(eo) /errout-vss 10 ma v itrip itrip-vss vss-0.3 ... vcc+0.3 v module t c -40 ... 125 c t stg -40 ... 125 c v isol ac sinus 50hz, all pins to heat sink, 1min 2500 v i t(rms) t terminal = 80 c, 20a per spring 60 a characteristics symbol conditions min. typ. max. unit inverter - igbt v ce(sat) i c =50a v ge =15v chiplevel t j =25c 1.45 1.85 v t j =150c 1.65 2.05 v v ce0 chiplevel t j =25c 0.9 1.1 v t j =150c 0.8 1 v r ce v ge =15v chiplevel t j =25c 11 15 m ? t j =150c 17 21 m ? i ces v ge =0v v ce = 600 v t j =25c 0.1 0.3 ma ma q g 0 v ... +15 v 300 nc t d(on) v cc = 300 v i c =50a v ge = +15/0 v 1) t j =150c 862 ns t r t j =150c 53 ns e on t j =150c 2.4 mj t d(off) t j =150c 1600 ns t f t j =150c 49 ns e off t j =150c 2.1 mj r th(j-s) per igbt 1.1 k/w
skiip 26nabi066v3 ? by semikron rev. 0 ? 06.07.2012 3 miniskiip ? cib ipm nabi 3-phase bridge rectifier + brake chopper + 3-phase bridge inverter intelligent power module skiip 26nabi066v3 features ? contact springs fo r solder-free and quick assembly ? trench-field-stop igbt ? freewheeling diodes in cal technology ? hvic gate driver in soi technology with advanced level shifter ? matched propagation delay ? over-current and under-voltage detection ? interlock logic for cross conduction protection ? multi-purpose error input ? integrated temperature sensor (ntc) ? rohs compliant ? ul recognised file no. e63532 typical applications* ? industrial & consumer drives ? power supplies (smps & ups) remarks ? product reliability results valid for t j 150c ? case temp. limited to t c = 125c max. (for baseplateless modules t c = t s footnotes 1) please refer to technical explanations characteristics symbol conditions min. typ. max. unit chopper - igbt v ce(sat) i c =50a v ge =15v chiplevel t j =25c 1.45 1.85 v t j =150c 1.65 2.05 v v ce0 chiplevel t j =25c 0.9 1.1 v t j =150c 0.8 1 v r ce v ge =15v chiplevel t j =25c 11 15 m ? t j =150c 17 21 m ? i ces v ge =0v v ce = 600 v t j =25c 0.1 0.3 ma ma t d(on) v cc = 300 v i c =50a v ge = +15/0 v 1) t j =150c 862 ns t r t j =150c 53 ns e on t j =150c 2.4 mj t d(off) t j =150c 1600 ns t f t j =150c 49 ns e off t j =150c 2.1 mj r th(j-s) per igbt 1.1 k/w inverse diode v f = v ec i f =50a v ge =0v chiplevel t j =25c 1.5 1.8 v t j =150c 1.6 1.8 v v f0 chiplevel t j =25c 11.1v t j =150c 0.85 0.95 v r f chiplevel t j =25c 11 14 m ? t j =150c 15 18 m ? i rrm i f =50a v ge =0v v cc = 300 v t j =150c 60 a q rr t j =150c 5.3 c e rr t j =150c 1mj r th(j-s) per diode 1.6 k/w freewheeling - diode v f = v ec i f =50a v ge =0v chiplevel t j =25c 1.5 1.8 v t j =150c 1.6 1.8 v v f0 chiplevel t j =25c 11.1v t j =150c 0.85 0.95 v r f chiplevel t j =25c 11 14 m ? t j =150c 15 18 m ? i rrm i f =50a v ge =0v v cc = 300 v t j =150c 60 a q rr t j =150c 5.3 c e rr t j =150c 1mj r th(j-s) per diode 1.6 k/w rectifier diode v f = v ec i f =13a v ge =0v chiplevel t j =25c 11.21v t j =125c 1.1 v v f0 chiplevel t j =25c 1.0 v t j =125c 0.8 v r f chiplevel t j =25c 9.2 18 m ? t j =125c 21 m ? r th(j-s) per diode 1.7 k/w
skiip 26nabi066v3 4 rev. 0 ? 06.07.2012 ? by semikron miniskiip ? cib ipm nabi 3-phase bridge rectifier + brake chopper + 3-phase bridge inverter intelligent power module skiip 26nabi066v3 features ? contact springs fo r solder-free and quick assembly ? trench-field-stop igbt ? freewheeling diodes in cal technology ? hvic gate driver in soi technology with advanced level shifter ? matched propagation delay ? over-current and under-voltage detection ? interlock logic for cross conduction protection ? multi-purpose error input ? integrated temperature sensor (ntc) ? rohs compliant ? ul recognised file no. e63532 typical applications* ? industrial & consumer drives ? power supplies (smps & ups) remarks ? product reliability results valid for t j 150c ? case temp. limited to t c = 125c max. (for baseplateless modules t c = t s footnotes 1) please refer to technical explanations characteristics symbol conditions min. typ. max. unit driver vcc vcc-vss, vccl-vssl 1) 15 v icco quiescent current, vcc=15v 1) 6.5 ma vbx vb1-u, vb2-v, vb2-w 1) 15 v ibx quiescent high side driver supply current per channel, vbx=15v 1) 380 450 a v it+ input threshold voltage (high) 1) 1.9 2.4 v v it- input threshold voltage (low) 1) 0.8 1.1 v v itrip+ itrip set threshold voltage 1) 0.51 0.6 v v itrip- itrip reset threshold voltage 1) 0.35 0.41 v v oerr error output, open drain 1) 15 v v uv supply under-voltage protection set 1) 10.5 11.1 v v uvr supply under-voltage protection reset 1) 11.5 12.3 v t d,itrip itrip to loutx/houtx shutdown propagation delay 700 ns t sis pwm short pulse suppression 0.47 s t td interlock dead time 0.48 s f sw switching frequency 25 khz temperatur sensor r 25 t r = 25 c 1) 5.0 5% k ? module m s to heat sink 2 2.5 nm wweight 60 g
skiip 26nabi066v3 ? by semikron rev. 0 ? 06.07.2012 5 fig. 1: typ. output characteristic fig. 2: typ. rated current vs. temperature i c = f(t s ) fig. 3: typ. turn-on /-off energy = f (i c ) fig. 4: typ. switching times vs. i c fig. 5: transient thermal impedance of igbt and diode fig. 6: typ. freewheeling diode forward characteristic
skiip 26nabi066v3 6 rev. 0 ? 06.07.2012 ? by semikron fig. 7: typ. input bridge forward characteristic
skiip 26nabi066v3 ? by semikron rev. 0 ? 06.07.2012 7 internal circuit pin and signal description
skiip 26nabi066v3 8 rev. 0 ? 06.07.2012 ? by semikron this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix * the specifications of our components may no t be considered as an assurance of component characteristics. components have to b e tested for the respective application. adjustments may be necessary. the use of semikron produc ts in life support appliances and syste ms is subject to prior specification and written approval by semikron. we therefore strongly recommend prior consultation of our staf f. pinout, dimensions
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